A 210-GHz fT SiGe HBT with a non-self-aligned structure |
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| Authors: | Jeng SJ Jagannathan B Rieh J-S Johnson J Schonenberg KT Greenberg D Stricker A Chen H Khater M Ahlgren D Freeman G Stein K Subbanna S |
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| Institution: | IBM Commun. R&D Center, Hopewell Junction, NY ; |
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| Abstract: | A record 210-GHz fT SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA/μm2 is fabricated with a new nonself-aligned (NSA) structure based on 0.18 μm technology. This NSA structure has a low-complexity emitter and extrinsic base process which reduces overall thermal cycle and minimizes transient enhanced diffusion. A low-power performance has been achieved which requires only 1 mA collector current to reach 200-GHz fT. The performance is a result of narrow base width and reduced parasitics in the device. Detailed comparison is made to a 120-GHz self-aligned production device |
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