| Abstract: | It will be described methods of the quantitative evaluation of elements interesting in semiconductor technology and their distribution in silicon using autoradiographic techniques. The local concentration of the element phosphorus in dependence of their local distribution is determined with silver halide films. As standard samples silicon disks phosphorus diffused are used. The distribution of the element boron and their local concentration is determined on the way of neutron induced autoradiography (NIAR). In this technique boron implanted or diffused silicon disks are used as standard samples. Different possibilities of the quantitative evaluation of autoradiograms will be considered and compared. |
