Preparation and characterization of semiconductor GNR-CNT nanocomposite and its application in FET

So far, little is known about the experimental potential of graphene nanoribbon-carbon nanotube (GNR-CNT) heterostructure as a semiconductor nanocomposite. The present work examined the structural features, topography and electronic properties of GNR-CNT nanocomposite by using Raman spectroscopy, transmission electron microscopy, scanning tunneling microscopy and spectroscopy (STS). The homogenous semiconductor GNR-CNT nanocomposites were produced under optimized synthesis conditions. The narrow band gap was exhibited by optimization of the reduction step. The STS of the micro-scale surface of the nanocomposite shows local density of state in selected areas that represent the 0.08 eV band gap of a homogenous nanocomposite. The potential of the semiconductor nanocomposite was considered for application in stacked graphene nanoribbon-field effect transistors (SGNR-FETs). A simple method of device fabrication is proposed based on a semiconductor stacked GNR nanocomposite. The high hole mobility and rectifying effect of the p–n junction of the SGNR nanocomposite on TiO₂ are demonstrated. The optimal thickness for the back gate TiO₂ dielectric for the tested devices was 40 nm. This thickness decreased leakage current at the p–n junction of the SGNR/TiO₂ interface, which is promising heterojunction for optoelectronics. The thickness of gate dielectric and quantum capacitance of the gate was investigated at the low 40 nm thickness by calculating the mobility. In the proposed SGNR-FET, holes dominate electrical transport with a high mobility of about 1030 cm²/V s.