Correlation between strain and defects in Bi implanted Si |
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| Institution: | 1. National Institute of Materials Physics, 405A Atomistilor Str., 077125 Magurele, Romania;2. University of Bucharest, Faculty of Physics, 405 Atomistilor Str, 077125 Magurele, Romania;3. Academy of Romanian Scientists, 54 Splaiul Independentei, 050094 Bucuresti, Romania;1. Post Graduate & Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur 613 503, Tamil Nadu, India;2. Post Graduate & Research Department of Physics, Rajah Serfoji Government College (Autonomous), Thanjavur 613 005, Tamil Nadu, India;3. Department of Nanotechnology, Noorul Islam Centre for Higher Education, Noorul Islam University, Kumaracoil 629 180, Tamil Nadu, India;1. Faculty of Mechanical Engineering, K. N. Toosi University of Technology, Tehran, Iran;2. Institute of Biomaterials and Biomedical Engineering, University of Toronto, Toronto, Ontario, Canada M5S 3G9;1. International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi, Vietnam;2. Advanced Institute of Science and Technology (AIST), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi, Vietnam;3. University of Transportation and Communication, No. 3 Cau Giay, Hanoi, Vietnam;4. Vietnam-Japan International Institute for Science of Technology (VJIIST), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi, Vietnam;1. School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, 86 Hongqi Road, Ganzhou 341000, Jiangxi, PR China;2. Department of Environmental Science and Engineering, School of Chemistry and Environment, Beihang University Beijing, 37 Xueyuan Road, Haiding Region, Beijing 100191, PR China;3. State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, 2 Xueyuan Road, Fuzhou 350002, PR China |
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| Abstract: | The strain in Si containing group-V impurities is a topical subject of study due to its potential applications in quantum computing. In this paper we study 209Bi implanted Si concerning the correlation between the strain produced by stopped Bi ions and trapping characteristics of the defects resulted from implantation. The depths distributions of stopped ions and primary defects are simulated and the distributions of permanent defects are modelled for Si implanted with low fluence 209Bi ions of 28 MeV kinetic energy. For comparison, these depths distributions were similarly calculated for 127I ions with the same fluence and energy, implanted in Si. The results are compared with each other and correlated with the characteristics of traps in these systems, previously obtained. We demonstrate that the intensity of the strain field is the most important factor in changing of trap parameters, while the superposition between the region with strain and the region where defects are located is a second order effect. |
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| Keywords: | Field of strain Ion irradiation defects Trapping centres Modelling the distribution of defects |
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