Strain status of epitaxial Ge film on a Si (001) substrate |
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| Institution: | 1. College of Science, Inner Mongolia University of Technology, Hohhot 010051, China;2. College of Arts and Sciences, Shanghai Maritime University, Shanghai 201306, China;3. Tianjin Key Laboratory of Modern Engineering Mechanics, Department of Mechanics, Tianjin University, Tianjin 300072, China;4. College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China;5. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;1. Institute of Problems of Mechanical Engineering, V.O., Bolshoj pr. 61, St. Petersburg 199178, Russia;2. Ioffe Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia;3. Helmholtz_Zentrum Berlin fur Materialen und Energie, Elektronenspeicherring BESSY II D, 12489 Berlin, Germany;1. IM2NP, CNRS/Aix-Marseille University, Faculté des Sciences de Saint-Jérôme case 142, 13397 Marseille, France;2. Ecole Nationale Supérieure des Mines et de la Métallurgie, L3M, Annaba, Algeria;3. KTH, Royal Institute of Technology, School of Electrical Engineering and Computer Science (EECS), SE-164 40 Kista-Stockholm, Sweden;1. Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, Zürich CH-8093, Switzerland;2. Electron Microscopy Center Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland;3. Institute for Scientific Computing, Technische Universität Dresden, Willers-Bau B – Zellescher Weg 12-14, Dresden D-01062, Germany;4. CSEM, Rue Jaquet-Droz 1, CH-2002 Neuchâtel, Switzerland;5. Department of Condensed Matter Physics, Masaryk University, Kotlářská 2, CZ-61137 Brno, Czech Republic;6. CEITEC, Masaryk University, Kamenice 5, CZ-60177 Brno, Czech Republic;7. L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55, I-20125 Milano, Italy;8. L-NESS and Department of Physics, Politecnico di Milano and IFN-CNR, Via Anzani 42, I-22100 Como, Italy;1. Material Science Group, Indira Gandhi Centre for Atomic Research, HBNI, Kalpakkam 603102, India;2. Synchrotrons Utilization Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, India;3. Homi Bhabha National Institute, Anushakti Nagar, Mumbai 400094, India;4. CBCMT, VIT University, Vellore 632014, India;1. Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, Australia;2. Department of Physics and Astronomy, Uppsala University, Box 516, S-751 20 Uppsala, Sweden;3. Department of Physics, University of Dayton, Dayton, OH 45469, USA |
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| Abstract: | An epitaxial Ge film was grown on a Si (001) substrate via a two-step process through the molecular beam epitaxy technique. The strain status of non-annealed and annealed epitaxial Ge films was determined by X-ray diffraction, Raman spectroscopy, and a combination of high-resolution transmission electron microscopy and geometric phase analysis. Results showed that the strain in non-annealed and annealed epitaxial Ge films is nonhomogeneous from the Ge/Si interface to the Ge film surface. The strain parallel to the interface in the non-annealed epitaxial Ge film is compressive; this strain reaches a minimum near the surface and a maximum at the interface. By contrast, the strain parallel to the interface in the annealed epitaxial Ge film is tensile; this strain reaches a minimum at the interface and a maximum near the surface. |
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| Keywords: | Strain Epitaxial Ge film HRTEM X-ray diffraction Raman spectroscopy |
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