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Effect of substituting Ce for Zr on the electrical properties of NASICON materials
Affiliation:1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, China;2. Shanghai Institute of Technology, China;1. Advanced Thin Film Technology, Institute of Materials Science, TU-Darmstadt, D-64287, Darmstadt, Germany;2. Surface Science, Institute of Materials Science, TU-Darmstadt, D-64287, Darmstadt, Germany;3. Forschungszentrum Jülich GmbH, Institute of Energy and Climate Research, Materials Synthesis and Processing (IEK-1), 52425, Jülich, Germany;4. Helmholtz-Institute Münster, Forschungszentrum Jülich GmbH, D-52425, Jülich, Germany;1. Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongamro, Namgu, Pohang, Gyeongbuk, 790-784, South Korea;2. Materials Research Division, Research Institute of Industrial Science and Technology, 76 Cheongamro, Namgu, Pohang, Gyeongbuk, 790-330, South Korea;1. State Key Laboratory of Separation Membranes and Membrane Processes, Tianjin Polytechnic University, Tianjin, PR China;2. School of Environmental and Chemical Engineering, Tianjin Polytechnic University, Tianjin, PR China;3. Tianjin Institute of Power Sources, Tianjin 300384, PR China;1. State Key Laboratory of Separation Membranes and Membrane Processes, Tianjin, PR China;2. School of Environmental and Chemical Engineering, Tianjin Polytechnic University, Tianjin, PR China;3. Energy Storage and Distributed Resources Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Abstract:By investigation of the microstructure of cerium-doped NASICON materials prepared by solid state reaction, we find that variation in the cell parameters a, b and c can affect their activation energy (Ea) of ionic conductance. Furthermore, changes in the grain size and morphology can influence the pre-exponential factor σ0. Analysis of the electrical conductivity of cerium-doped NASICON grains reveals a decrease from that for the undoped grains. These results suggest that when dealing with Ce-doped NASICON system, the grain size and morphology play a more important role in determining the bulk conductivity than the lattice parameters, at least within a temperature range of 225–350 °C.
Keywords:NASICON  Cerium  Electrical conductivity  Microstructure
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