Some new results on transport and density of state distribution in glow discharge microcrystalline silicon |
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| Authors: | P.G. Lecomber G. Willeke W.E. Spear |
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| Affiliation: | Carnegie Laboratory of Physics, The University, DUNDEE DD1 4HN, Scotland, UK |
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| Abstract: | The electronic properties of the material are discussed on the basis of the grain boundary trapping model proposed for polycrystalline Si. In spite of the difference in crystallite sizes it is shown that the model is applicable, leading to 1011 cm?2 filled states between crystallites. Gap state densities between 2 × 1018 and 4 × 1018cm?3eV?1 are deduced from field effect measurements. |
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