Doping of microcrystalline Si:H,Cl films in R.F. glow discharge |
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| Authors: | Giovanni Bruno Pio Capezzuto Francesco Cramarossa Vincenzo Barbarossa Vincenzo Augelli Roberto Murri |
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| Institution: | Dipartimento di Chimica and Centro di Studio per la Chimica dei Plasmi, C.N.R. Università di Bari, Via Amendola 173, 70126 Bari Italy;Dipartimento di Fisica and Gruppo Nazionale di Struttura della Materia. Università di Bari, Via Amendola 173, 70126 Bari Italy |
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| Abstract: | The deposition rate of n-doped μc-Si:H,Cl GD films has been found to increase with the gas phase phosphine content, while the opposite behaviour has been observed for p-doped specimens. The optical gap ranges between 1.8 ÷ 2.6 eV and its variation seems related to hydrogen and chlorine contents. The effectiveness of the doping has been tested by electrical conductivity measurements. |
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