Preferential segregation of dopants in μc-Si:H

Electronic and structural properties of heavily B-doped μc-Si:H films prepared by rf glow discharge technique have been studied by Raman scattering, IR absorption, SIMS and conductivity measurements. It is found that boron atoms in μc-Si:H tend to segregate in the amorphous tissue. The remarkable difference in doping efficiency between B- and P-doped μc-Si:H was interpreted in terms of the different degree of dopant segregation in the amorphous phase.