Hydrogenated amorphous silicon produced by laser induced chemical vapor deposition of silane |
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| Authors: | M. Meunier J.H. Flint D. Adler J.S. Haggerty |
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| Affiliation: | Massachusetts Institute of Technology, Cambridge, MA 02139, USA |
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| Abstract: | a-Si:H films deposited by laser induced CVD (LICVD) have been characterized and the growth process modelled. Growth rates are exponentially dependent on gas temperature and film properties follow the equilibrium hydrogen content, exponentially dependent on substrate temperature. |
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