The effects of deposition parameters on a-Si:H films fabricated by microwave glow discharge techniques |
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| Authors: | S.R. Mejia R.D. McLeod K.C. Kao H.C. Card |
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| Affiliation: | Materials and Devices Research Laboratory, Department of Electrical Engineering, University of Manitoba, Winnipeg, Canada R3T 2N2 |
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| Abstract: | Hydrogenated amorphous silicon (a-Si:H) films have been fabricated by a novel method of microwave glow-discharge deposition from SiH4 and H2, operating at 2.45 GHz. The properties of the deposited films are dependent upon the confinement of the microwave plasma by a magnetic field, and upon the orientation of the substrates with respect to the electric field. The quality of these materials is comparable to that of films deposited in conventional radio-frequency glow-discharge systems. |
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