Preparation and analysis of reactively evaporated a-Si:H

a-Si:H formed by the method of reactive evaporation of silicon with supplying hydrogen ion has much the same properties as films prepared by silane grow discharge (GD) decomposition. Growth kinetics in this method is described. Hydrogen ion suppresses the oxidation of silicon and it is incorporated as mono-hydride, whose content is proportional to hydrogen ion current. Adsorption energy of hydrogen ion is some 130 meV. Dark conductivity of a-Si:H depends mainly on energy gap associated with hydrogen content. Spin density is determined by the collision phenomenon between Si-H and spin in depositing.