The location,evolution, and role of fluorine in glow discharge a-Si:F |
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| Authors: | M. Janai R. Weil B. Pratt |
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| Affiliation: | Department of Physics and Solid-State Institute, Technion-Israel Institute of Technology, Haifa 32 000, Israel |
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| Abstract: | Amorphous Si:F films werer prepared by d.c. glow-discharge decomposition of a mixture of SiF2+SiF4 gas. Fluorine content, infra-red absorptance, electron spin density and electronic transport properties were determined as a function of both deposition and annealing temperatures. The role of fluorine in a-Si:F is discussed on the basis of the results. |
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