NMR study of μc-Si:H |
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| Authors: | Shigenobu Hayashi Satoshi Yamasaki Akihisa Matsuda Kazunobu Tanaka |
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| Affiliation: | National Chemical Laboratory for Industry, Tsukuba, Ibaraki 305, Japan;Electrotechnical Laboratory, Sakumura, Ibaraki 305, Japan |
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| Abstract: | The behavior of hydrogen in glow-discharge (GD) μc-Si:H has been characterized by 1H NMR. The 1H spectra consist of two components with different linewidths. The linewidth (FWHM) of the narrow component is about 0.5 kHz at ν0 = 90 MHz, being much narrower than has been observed in GD a-Si:H deposited under a conventional low RF-power condition. It has been demonstrated that the 0.5-kHz FWHM component originates from the hydrogens in motional narrowing state, and such fast-moving hydrogens are incorporated both in μc-Si:H and high-power deposited a-Si:H. |
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