Fundamental mechanisms in silane plasma decompositions and amorphous silicon deposition

The mechanisms resulting in amorphous silicon deposition from silane glow discharges are classified in primary processes, (electron impact on silane), and secondary processes such as ion-molecule and radical-molecule reactions. The low pressure limit of a multipole DC discharge is shown to allow the measurement of various cross-sections associated with the primary processes, in particular spontaneous emission. The results from a plasma probing with ion mass spectrometry, laser induced fluorescence and other techniques are described in relevance to the problem of the thin film growth.