| Abstract: | The effect of plasma parameter on the properties of a-Si:H films prepared by glow discharge process in cylindrical diode system has been studied. The glow discharge plasma is examined by measurements of the emission spectra for H, H2, SiH and Si radicals, the mass spectra for primary decomposed and secondary polymerized ions, and the rf discharge impedance. The plasma reactions are dominated by the rf electric potential Vp and silane gas pressure p. The nucleation of SiH2 bonding depends critically on the electron and ion bombardments and the plasma polymerization. |
