Growth kinetics of amorphous hydrogenated silicon studied by pulsed rf discharge |
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| Authors: | Toshihiko Hamasaki Masato Ueda Masataka Hirose Yukio Osaka |
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| Affiliation: | Department of Electrical Engineering, Hiroshima University, Higashihiroshima 724, Japan |
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| Abstract: | The growth rate and hydrogen bonding configuration of a-Si:H prepared by a pulsed rf discharge technique were measured as a function of repetition frequency. The result was compared with the case of the gas-phase polymerization of monomers C2H2, C2H4, and C2H6 in a pulsed rf discharge. From distinct difference between the pulsed-plasma depositions of a-Si:H and C:H films, it is concluded that the growth of a-Si:H proceeds through the heterogeneous reactions among chemical species on the substrate surface. |
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