Homogeneous chemical vapor deposition of amorphous semiconductor thin films |
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Authors: | B.A. Scott W.L. Olbricht J.A. Reimer B.S. Meyerson D.J. Wolford |
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Affiliation: | IBM T.J. Watson Research Center, Box 218, Yorktown Heights, NY 10598, USA |
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Abstract: | In this paper we discuss the properties of amorphous hydrogenated silicon and germanium films prepared by homogeneous chemical vapor deposition. Emphasis is placed upon the important differences between HOMOCVD and plasma-deposited films. Experiments and calculations are presented which illustrate the most important reactor dynamical parameters. |
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