Raman scattering in low wavenumber region as a new probe to structural properties of microcrystalline silicon |
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| Authors: | Toshikazu Shimada Yoshifumi Katayama Kiyokazu Nakagawa Hirokazu Matsubara Masatoshi Migitaka Eiichi Maruyama |
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| Institution: | Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo, Japan |
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| Abstract: | The structural properties of microcrystalline silicon (μc-Si) are studied by Raman scattering. It is found that the intensity of each Raman band closely correlates with the absorption coefficient in the interband region and that the Raman band at ca. 150 cm?1 is a sensitive probe to randomness of Si-Si bonding structure in μc-Si. |
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