The effect of crystallization on doping efficiency in a-Si:H films |
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| Authors: | Yuliang He Yionghong Yen Ruling Wu Kunji Chen |
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| Affiliation: | The Institute for Solid State Physics of Nanjing University, Nanjing, China |
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| Abstract: | The structure of A-Si:H films can be changed by substitutional doping of boron and phosphours dopants. Proper regulation of technological parameters, Ts and r. f. power, can result in a mode transformation from amorphous morphology into microcrystalline or polysilicon like one. The crystallization of amorphous silicon film leads to a further reduction in its room-temperature resistivity by about three order of magnitude and a reduction in its activation energy of electrical conductivity. |
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