Electric field ionization from deep trapping levels in a-Selenium

The deep trapping levels in a-selenium have been measured by the electric field stimulated current method. It is found that the enhancement of detrapping from the trapping levels is proportional to EXP ($\text{α/}\text{kTxE}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$) where $\text{α/}\text{kT}\text{=0.012 (}\text{m/V}\text{)}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$) and E is electric field. The distribution of trapping time is also obtained.