Transformation of microcrystalline state of hydrogenated silicon to amorphous one due to presence of more electronegative impurities |
| |
| Authors: | Akio Hiraki Yoshito Fukushima Takashi Sato Hideki Kiyono Hitoshi Terauchi Takeshi Imura |
| |
| Affiliation: | Department of Electrical Engineering, Osaka University, Suita, Osaka, 565 Japan |
| |
| Abstract: | When a slight fraction (～ 2 mol %) of N2 is added into H2, sputtering atmosphere for microcrystalline hydrogenated Si films, without changing other fabrication parameters, the amorphous film rather than microcrystalline one forms. The stabilization mechanism of the amorphous film of Si is discussed through TEM and IR observations of this kind of transformation from microcrystal to amorphous state. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
