Properties of a-Si:H prepared by the photochemical decomposition of Si2H6 |
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| Authors: | Yasuyoshi Mishima Yoshinori Ashida Masataka Hirose |
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| Institution: | 1. Department of Electrical Engineering, Hiroshima University, Higashihiroshima 724, Japan;2. Corporate Development Department, Mitsui Toatsu Chemicals, Inc., Tokyo 100, Japan |
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| Abstract: | High quality a-Si:H films have been prepared by the direct photolysis of disilane at a substrate temperature below 350 °C. The growth rate is independent of substrate temperature for both undoped and phosphorus doped films, while it is thermally activated and dramatically enhanced by boron doping. The hydrogen content decreases from 7 to 2 at.%, as deposition temperature is varied from 200 to 300 °C. The photoconductivity as high as 3.7 × 10?4 Ω?1cm?1 (AM1 100 mW/cm2) has been obtained and no light soak degradation was observed. |
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