Properties of microcrystalline P doped Si:H films

Microcrystalline (μc) P (phosphorous) doped Si:H films have been prepared on several substrates by glow discharge decomposition in a mixture of H₂, PH₃ and SiH₄ under various deposition conditions. The P content in deposited μc-films strongly depended on the deposition conditions. Their electrical properties were not much affected by the volume fraction of crystalline phase but were rather determined by the P content. The incorporation mechanism of P atoms into Si:H film is discussed.