Two-colour HgCdTe infrared detectors operating above 200 K |
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Authors: | J. Rutkowski P. Madejczyk A. Piotrowski W. Gawron K. Jóźwikowski A. Rogalski |
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Affiliation: | (1) Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland;(2) Vigo System S.A., 129/133 Poznańska Str., 05-850 Ożarów Mazowiecki, Poland |
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Abstract: | The performance of dual waveband HgCdTe photodiodes fabricated using metaloorganic chemical vapour deposition operated at high temperatures is presented. The effect of additional separating layer on the quantum efficiency and cross-talk of the photodiodes is analyzed. The photodiodes with cutoff wavelengths up to 6 μm, good R0A product, and high quantum efficiency at 200 K have been demonstrated. The temperature dependence of the differential resistance is discussed. It is shown that the multilayer heterojunction P-n-N-n-P structure operating in a simultaneous mode has better performance than a structure operating in a sequential mode. |
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Keywords: | HgCdTe infrared detectors two-colour detectors dual waveband detectors photodiodes MOCVD growth multi-layer heterojunctions |
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