| Abstract: | In this work the thermal, velocity and species fields in the melt during the crystal growth by the vertical Bridgman method, has been studied. The simulations were focused on the special case of GaSb, which is a semiconductor of high technological importance. The simulations have been carried out both in 2 and 3‐D. In both cases the momentum (Navier‐Stockes), energy and mass transport equations were solved. The wall‐to‐wall radiation has also been included. In the two‐dimensional case an axisymmetric global model was developed taking into account the different elements present inside the real Bridgman growth system. In order to study the transport processes in the whole system during a complete growth process, the time dependence has also been considered. In the three‐dimensional case, the mathematical domain is restricted to the melt. These simulations were developed in order to study the influence of the ampoule tilting on the dopant distribution in the melt. |
