Angular-resolved photoemission from GaAs(110) surfaces with adsorbed Al |
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| Authors: | A Huijser J Van Laar TL Van Rooy |
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| Institution: | Philips Research Laboratories, Eindhoven, The Netherlands |
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| Abstract: | GaAs(110) surfaces with adsorbed Al were studied by a combination of angular-resolved valence band photoemission, Ga 3d core level photoemission, low energy electron loss spectroscopy and Auger electron spectroscopy. At room temperature Al is adsorbed on top of GaAs. After heat treatment the compound AlAs is formed at the surface, which is used as a substrate for Ga adsorption to form the inverted structure of the system GaAs + Al. |
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