Chemisorption of O2 and N2O on Cu/Ru(001) |
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Authors: | S.-K. Shi H.-I. Lee J.M. White |
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Affiliation: | Department of Chemistry, University of Texas, Austin, Texas 78712, USA |
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Abstract: | The interaction of O2 and N2O are compared on the basal plane of Ru as a function of the coverage of copper. Dissociative N2O uptake (N2O(g) → O(a) + N2(g)) on clean Ru was measured using AES and transient partial pressures. The initial dissociative reaction probability is a steadily declining function of temperature while the saturation uptake of oxygen remains constant from 300–900 K. The saturation oxygen AES signal for N2O chemisorption was one half that observed for O2 chemisorption. The presence of 0.02 monolayers of Cu retards the initial dissociative adsorption of N2O by 40% but has little effect on the total uptake of oxygen. The initial dissociative sticking coefficient for O2 is not retarded significantly by small amounts of copper. Deposition of larger amounts of Cu leads to the completion of a 2D overlayer before growth in 3D begins. Surfaces covered with less than 3 monolayers of Cu exhibit larger O2 sticking coefficients and greater oxygen stability than pure Cu. |
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