Adsorption of oxygen on the (110) plane of tungsten at low temperatures |
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Authors: | H. Michel R. Opila R. Gomer |
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Affiliation: | The James Franck Institute, University of Chicago, 5640 S. Ellis Avenue, Chicago, Illinois 60637, USA |
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Abstract: | Isotope labelling experiments have established that the adsorption of O2 on the W(110) plane at 20 K leads first to the formation of a dissociated atomic layer. A weakly bound molecular species, α-O2, forms only when the atomic layer is essentially complete (O/W = 0.6). The desorption of α-O2 was found to be first order with an activation energy of and a frequency factor γ = 3 × 109 s?1. The activation energy is shown to be less than the enthalpy of desorption and the meaning of this result is discussed. |
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