| 混合应变多量子阱有源材料及其增益偏振特性 |
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| 引用本文： | 段子刚. 混合应变多量子阱有源材料及其增益偏振特性[J]. 光子学报, 2003, 32(12): 1453-1455 |
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| 作者姓名： | 段子刚 |
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| 作者单位： | 深圳大学光电子学研究所,广东省光电子器件与系统重点实验室,深圳,518060 |
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| 摘 要： | 采用MOCVD外延交替生长了压应变、张应变InxGa1-xAsyP1-y多量子阱材料,对应1.3 μm波段.平均应变量-0.16%,周期11 nm.采用三个周期外延材料的芯片制作的LD,实现了TE和TM双偏振模激射.
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| 关 键 词： | SOA 偏振无关 TM模增益 混合应变量子阱 |
| 收稿时间： | 2003-01-02 |
| 修稿时间： | 2003-01-02 |
Mix Strained MQW Active Materal and Its Gain Polarization Characteristic |
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| Duan Zigang Institute of Optoelectronics of Shenzhen University,Key Laboratory of Optoelectronics Device and Systems of Guangdong Province,Shenzhen. Mix Strained MQW Active Materal and Its Gain Polarization Characteristic[J]. Acta Photonica Sinica, 2003, 32(12): 1453-1455 |
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| Authors: | Duan Zigang Institute of Optoelectronics of Shenzhen University Key Laboratory of Optoelectronics Device Systems of Guangdong Province Shenzhen |
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| Affiliation: | Duan Zigang Institute of Optoelectronics of Shenzhen University,Key Laboratory of Optoelectronics Device and Systems of Guangdong Province,Shenzhen 518060 |
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| Abstract: | Tensile and compressive mix alternant strained MQW materials in 1.3 μm band are made by MOCVD epitaxy. TM polarization mode gain in the LD made by using three periods of the mixed MQWs with -0.16% net strain and 11nm period as active material has been obtained, and double polarization mode lasing simultaneously in the LD has been realized. |
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| Keywords: | SOA Polarization independence TM mode gain Mix strained quantum wells |
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