Magnetoplastic effect in silicon: A search for new methods of controlling structure-sensitive properties of elemental semiconductors

The effect of static magnetic fields up to 1 T on the state of impurity point defects and the mobility of surface dislocation segments in doped (0.01–1.00 Ω cm) silicon has been considered. Long-lived (∼100 h) changes in the state of point defects have been revealed from the mobility of dislocations introduced after the magnetic-field treatment. The concentration dependence of the magnetoplastic effect in p-type silicon has been studied. A threshold impurity concentration of 10¹⁵ cm⁻³ has been found, below which the magneto-plastic effect has not been observed. The influence of magnetic-field pretreatment on the expectation times and activation barriers for dislocation depinning from stoppers and the effect of thermal preannealing on the magnetoplasticity in Si have been considered.