| 采用多晶硅制造高速光导开关(Au:Si-PCSS)的研究 |
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| 引用本文： | 赏宝珩,吴通锡.采用多晶硅制造高速光导开关(Au:Si-PCSS)的研究[J].激光与红外,1993(1). |
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| 作者姓名： | 赏宝珩 吴通锡 |
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| 作者单位： | 浙江大学信息电子系，浙江大学信息电子系 杭州 310008，杭州 310008 |
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| 摘 要： | 首次报导采用多晶硅制造高速光导开关取得缩短寿命至10ns以下并改善光控灵敏度。分析了原理并涉及工艺等问题。文中对GaAs与Si两种材料的PCSS作了比较。
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| 关 键 词： | 多晶硅 光导开关 载流子寿命 |
Study on Using Polysilicon to Make High Speed Photoconductive Semiconductor Switches (PCSS) |
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| Shang Baoheng Wu Tongxi.Study on Using Polysilicon to Make High Speed Photoconductive Semiconductor Switches (PCSS)[J].Laser & Infrared,1993(1). |
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| Authors: | Shang Baoheng Wu Tongxi |
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| Abstract: | We report in this paper that the polysilicon material is used to make high speed photoconductive semiconductor switches (PCSS). The photoconductivity gain of the PCSS is greatly improved and the lifetime shortened to less than 10 nanosecond. The principle is analyzed and the related technique process is discussed. Characteristics of both PCSS of GaAs and Si are reviewed and compared. |
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| Keywords: | polysilicon photoconductive switches carrier lifetime |
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