| 分子束外延调制掺杂结构的低温光致荧光 |
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| 引用本文： | 黄绮,周均铭,贾惟义,程文芹,王彦云. 分子束外延调制掺杂结构的低温光致荧光[J]. 物理学报, 1987, 36(2): 165-171 |
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| 作者姓名： | 黄绮 周均铭 贾惟义 程文芹 王彦云 |
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| 作者单位： | 中国科学院物理研究所 |
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| 摘 要： | 本文报道了分子束外延调制掺杂GaAs/N-AIGaAs二维电子气材料的低温光致荧光结果。实验表明,光致荧光谱分析可以作为二维电子气材料的质量诊断技术,由光致荧光谱得到的质量评价与材料的电学性能恰相对应,这就为改进分子束外延工艺提供了依据。关键词：
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| 收稿时间： | 1986-01-21 |
LOW TEMPERATURE PHOTOLUMENESCENCE OF THE MODULATION DOPED HETEROSTRUCTURE GROWN BY MBE |
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| HUANG YI,ZHOU JUN-MING,JIA WEI-YI,CHENG WEN-QIN and WANG YAN-YUN. LOW TEMPERATURE PHOTOLUMENESCENCE OF THE MODULATION DOPED HETEROSTRUCTURE GROWN BY MBE[J]. Acta Physica Sinica, 1987, 36(2): 165-171 |
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| Authors: | HUANG YI ZHOU JUN-MING JIA WEI-YI CHENG WEN-QIN WANG YAN-YUN |
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| Abstract: | The results of photolumenescence measurements of modulation doped GaAs/N-AlGaAs 2DEG at 4.2 K are reported. They show that the photolumenescence method can be used as a diagnostic means for determing the quality of 2DEG materials. The features of the spectra have some correlation with electronic properties of 2DEG and provide some possibilities for improving MBE technology. |
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