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AgGaSe2 : A highly photoconductive material |
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| Authors: | UN Roy Y Cui A Burger JT Goldstein |
| Institution: | a Department of Physics, Fisk University, Nashville, TN 37208-3051, United States b Y-12 National Security Complex, BWXT LLC, Oak Ridge, TN 37830, United States c Air Force Research Laboratory, Wright Patterson Air Force Base, OH 45433, United States |
| Abstract: | High resistivity single crystals of AgGaSe2 were grown by the horizontal Bridgman technique. The near band edge photoconductivity of the grown crystal at room temperature was found to be up to 2×104 times higher than the dark conductivity, under the illumination of 10−3 W/cm2. The photoconductivity spectrum consists primarily of three peaks, which are attributed to the transitions from Γ7(A), Γ6(B) and Γ7(C) states of valence band to the conduction band Γ6. The crystal field splitting and the spin-orbit splitting were determined from these peak energy positions of the photoconductivity spectrum. |
| Keywords: | 72 80 Jc 71 70 -d 72 40 +w 72 20 Jv |
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