Characterization of ZrB2(0 0 0 1) surface prepared by ex situ HF solution treatment toward applications as a substrate for GaN growth |
| |
Authors: | R Armitage J Suda T Kimoto |
| |
Institution: | Department of Electronic Science and Engineering, Kyoto University, Kyoto Daigaku Katsura, Nishikyo-ku, Kyoto 615-8101, Japan |
| |
Abstract: | ZrB2(0 0 0 1) crystals grown by the rf-floating zone technique were characterized by X-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and atomic force microscopy. These characteristics were investigated as a function of thermal cleaning temperature up to 1000 °C in vacuum for as-received substrates as well as substrates treated ex situ in HF aqueous solution. The HF treatment process removed the ZrO2 native oxide layer present on as-received substrates and resulted in ZrB2(0 0 0 1) surfaces exhibiting long-range order. Upon annealing the HF-treated surface in high vacuum, two types of reconstructions were observed: an incommensurate reconstruction from 650 to 900 °C related to residual H2 gas, and n × n reconstructions at 1000 °C, possibly related to oxygen. |
| |
Keywords: | Borides ZrB2 RHEED X-ray photoelectron spectroscopy Sticking Epitaxy Gallium nitride |
本文献已被 ScienceDirect 等数据库收录! |
|