Preparation and characterization of CdS/Si coaxial nanowires |
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Authors: | X.L. Fu L.H. Li |
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Affiliation: | a Department of Physics, Zhejiang Sci-Tech University, Xiasha College Park, Hangzhou 310018, China b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China c Department of Physics, University of Rhode Island, Kingston, RI 02881, USA |
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Abstract: | CdS/Si coaxial nanowires were fabricated via a simple one-step thermal evaporation of CdS powder in mass scale. Their crystallinities, general morphologies and detailed microstructures were characterized by using X-ray diffraction, scanning electron microscope, transmission electron microscope and Raman spectra. The CdS core crystallizes in a hexagonal wurtzite structure with lattice constants of a=0.4140 nm and c=0.6719 nm, and the Si shell is amorphous. Five Raman peaks from the CdS core were observed. They are 1LO at 305 cm−1, 2LO at 601 cm−1, A1-TO at 212 cm−1, E1-TO at 234 cm−1, and E2 at 252 cm−1. Photoluminescence measurements show that the nanowires have two emission bands around 510 and 590 nm, which originate from the intrinsic transitions of CdS cores and the amorphous Si shells, respectively. |
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Keywords: | 61.46.+w 70 78.30.Fs 78.55.Et 78.67.Pt |
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