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Phenomenological band structure model of magnetic coupling in semiconductors |
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| Authors: | Gustavo M. Dalpian,Su-Huai Wei,X.G. Gong,Antô nio J.R. da Silva |
| Affiliation: | a National Renewable Energy Laboratory, Basic Science Center, 1617 Cole Blvd., Golden, CO 80401, USA b Department of Physics, Fudan University, Shanghai 200433, China c Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China d Instituto de Física, Universidade de São Paulo, CP 66318, 05315-970 São Paulo, SP, Brazil |
| Abstract: | A unified band structure model is proposed to explain the magnetic ordering in Mn-doped semiconductors. This model is based on the p-d and d-d level repulsions between the Mn ions and host elements and can successfully explain magnetic ordering observed in all Mn doped II-VI and III-V semiconductors such as CdTe, GaAs, ZnO, and GaN. The model can also be used to explain the interesting behavior of GaMnN, which changes from ferromagnetic ordering to antiferromagnetic ordering as the Mn concentration increases. This model, therefore, is useful to provide a simple guideline for future band structure engineering of magnetic semiconductors. |
| Keywords: | 75.50.Pp 71.55.&minus i 71.70.&minus d |
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