Effect of Γ-X band crossover and impurity location on the diamagnetic susceptibility of a donor in a quantum well

We present the calculation of diamagnetic susceptibility (χ_dia) of a hydrogenic donor in GaAs/Al_xGa_1−xAs quantum well for various compositions of Al and for different impurity locations within the well. The effect of Γ-X band crossing due to hydrostatic pressure on χ_dia is also investigated taking into account the non-parabolicity of the conduction band.