Non-catalytic growth of high aspect-ratio ZnO nanowires by thermal evaporation |
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| Authors: | A Umar YB Hahn |
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| Institution: | a School of Chemical Engineering and Technology, Nanomaterials Processing Research Centre, Chonbuk National University, Jeonju 561-756, South Korea
b Department of Semiconductor Science and Technology, Semiconductor Physics Research Centre, Chonbuk National University, Jeonju 561-756, South Korea |
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| Abstract: | High-density and high aspect-ratio ZnO nanowires were grown on Si(100) substrates by the thermal evaporation of metallic zinc powder without the use of metal catalysts or additives. The as-grown nanowires had diameters in the range of 60-100 nm with lengths 5-15 μm. Detailed structural characterization indicated that the obtained nanowires are single-crystalline with a perfect hexagonal facet and surfaces. The room temperature PL spectrum exhibited strong UV emission, affirming that the as-grown products have good optical properties. The possible growth mechanism for the formation of hexagonal-faceted and perfect surface ZnO nanowires is also discussed. |
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| Keywords: | 68 65 +g 78 66 Hf 81 05 Dz |
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