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Temperature dependence of absorption edge anisotropy in 2H- MoSe2 layered semiconductors |
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| Authors: | S.Y. Hu J.L. Shen K.K. Tiong |
| Affiliation: | a Department of Electronic Engineering, Research Center for Micro/Nano Technology, Tung Nan Institute of Technology, Taipei 222, Taiwan b Department of Computer Science and Information Engineering, Research Center for Micro/Nano Technology, Tung Nan Institute of Technology, Taipei 222, Taiwan c Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan d Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202, Taiwan e Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan |
| Abstract: | The absorption-edge anisotropy of 2H- MoSe2 was studied by photoconductivity (PC) measurements as a function of temperature in the range of 12-300 K. A significant shift towards lower energies has been observed in the PC spectra on the edge plane with respect to those corresponding to the van der Waals (VdW) plane. The parameters that describe the temperature dependence of the absorption edges are evaluated by the Bose-Einstein empirical expression. Effective phonon energy was estimated from the temperature dependence of the Urbach energy. The estimated effective phonon energy for the VdW and edge planes, respectively, can be correlated to the observed Raman active  and  modes. |
| Keywords: | 72.40.+w 72.80.Ga 73.50.Pz |
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