Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique |
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Authors: | H. Gotoh T. Akasaka T. Tawara Y. Kobayashi T. Makimoto H. Nakano |
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Affiliation: | NTT Basic Research Laboratories, NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan |
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Abstract: | Spatially localized excitons are observed in InGaN quantum well structures at 4 K by using a micro-photoluminescence (PL) technique. By combining PL and nano-lithographic techniques, we are able to detect PL signals with a 0.2 μm spatial resolution. A sharp PL line (linewidth of <0.4 meV) is clearly obtained, which originates from a single localized exciton induced by a quantum dot like a local potential minimum position. Sharp PL spectra detected in three QWs with different indium compositions confirm that there are exciton localization effects in quantum wells in the blue-green (about 2.60 eV, 477 nm) to purple (about 3.05 eV, 406 nm) regions. |
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Keywords: | 78.67.De 71.35.&minus y 78.55.Cr |
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