XPS study of vanadium surface oxidation by oxygen ion bombardment |
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Authors: | N. Alov D. Kutsko Z. Bastl |
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Affiliation: | a Department of Analytical Chemistry, M.V. Lomonosov Moscow State University, 119992 Moscow, Russia b Laboratory of Electron Spectroscopy, J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejškova 3, 18223 Prague 8, Czech Republic |
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Abstract: | Oxidation of vanadium metal surfaces at room temperature by low-energy oxygen ion beams is investigated by X-ray photoelectron spectroscopy (XPS). It is observed that ion-beam irradiation of clean V results in formation of thin oxide layer containing vanadium in oxidation states corresponding to VO, V2O3, VO2 and V2O5 oxides. The composition of the products of ion-beam oxidation depends markedly on oxygen ion fluence. The results of angle-resolved XPS measurements are consistent with a structure of oxide film with the outermost part enriched in V2O5 and VO2 oxides and with V2O3 and VO oxides located in the inner region of the oxide layer. |
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Keywords: | Vanadium oxide Oxide film Ion-beam oxidation X-ray photoelectron spectroscopy |
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