Band-edge exciton transitions in (Ga1−xMnx)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition |
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Authors: | H.C. Jeon T.W. Kang Y.H. Cho |
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Affiliation: | a Department of Physics, Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, South Korea b Division of Electronics and Computer Engineering, Advanced Semiconductor Research Center, Hanyang University, Seoul 133-791, South Korea c Department of Physics, Chungbuk National University, Cheung Ju, South Korea |
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Abstract: | (Ga1−xMnx)N thin films grown on GaN buffer layers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors (DMSs) with band-edge exciton transitions for applications in optomagnetic devices. The magnetization curve as a function of the magnetic field at 5 K indicated that ferromagnetism existed in the (Ga1−xMnx)N thin films, and the magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature of the (Ga1−xMnx)N thin film was above room temperature. Photoluminescence and photoluminescence excitation spectra showed that band-edge exciton transitions in (Ga1−xMnx)N thin films appeared. These results indicate that the (Ga1−xMnx)N DMSs with a magnetic single phase hold promise for potential applications in spin optoelectronic devices in the blue region of the spectrum. |
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Keywords: | 75.50.Pp 75.60.Ej 75.70.Ak |
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