Atomic structure of thin dysprosium-silicide layers on Si(1 1 1) |
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Authors: | I Engelhardt |
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Institution: | Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, D-10623 Berlin, Germany |
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Abstract: | We report on scanning tunneling microscopy results of thin dysprosium-silicide layers formed on Si(1 1 1). In the submonolayer regime, both a and a 5 × 2 superstructure were found. Based on images taken at different tunneling conditions, a structure model could be developed for the superstructure. For one monolayer, a 1 × 1 superstructure based on hexagonal DySi2 was observed, while several monolayers thick films are characterized by a superstructure from Dy3Si5. |
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Keywords: | Lanthanides Silicides Silicon Thin film structures Scanning-tunneling microscopy |
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