Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots |
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| Authors: | W. Lei Y.H. Chen B. Xu P. Jin Y.L. Wang Ch. Zhao Z.G. Wang |
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| Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China |
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| Abstract: | We have observed an unusual temperature sensitivity of the photoluminescence (PL) peak energy for InAs quantum dots grown on InAs quantum wires (QDOWs) on InP substrate. The net temperature shift of PL wavelength of the QDOWs ranges from 0.8 to −4 Å/°C depending upon the Si doping concentration in the samples. This unusual temperature behavior can be mainly ascribed to the stress amplification in the QDOWs when the thermal strain is transferred from the surrounding InAs wires. This offers an opportunity for realizing quantum dot laser devices with a temperature insensitive lasing wavelength. |
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| Keywords: | 78.55.&minus m 78.55.Cr |
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