二元氧化物绝缘层的溶液法制备及在阻变存储器中的应用

阻变存储器(RRAM)凭借可高度集成、可同时存储和运算、运行速率快、功耗低等特性，成为最具潜力的存储技术之一。因电学性能优良且与互补金属氧化物半导体(CMOS)兼容性好，二元氧化物材料在RRAM的发展中具有重要意义。与传统绝缘层沉积工艺不同，溶液法制备绝缘层是先将前驱体溶液制成薄膜，再将薄膜通过不同的工艺转化为绝缘层。因此前驱体溶液种类以及转化工艺均对所制备的绝缘层的微观结构、化学组成和电学性能具有直接的影响。本文首先简要介绍了RRAM的发展历程及作用机制；其次综述了溶液法制备氧化物材料在忆阻器中的应用，重点围绕前驱体溶液组成、转化机理与所制备氧化物绝缘层结构性能关系对已报道的结果进行分析，最后阐述了溶液法制备绝缘层材料面临的关键问题并展望了其未来发展方向。

The Solution Processed Binary Oxide Insulator and Its Application in Resistive Memory

Resistive Random Access Memory (RRAM) is one of the most promising storage technologies due to its high level of integration, simultaneous storage and computing, fast operation rate, and low power consumption. Binary oxide materials are important in the development of RRAM because of their excellent electrical properties and compatibility with complementary metal oxide semiconductor (CMOS). Different from the conventional insulating layer deposition process, the solution-processed insulator is to fabricate thin film from the precursor solution first, and then transform it into an oxide insulating layer by different processes. Therefore, both the precursor solution type and the conversion process directly influence microstructure, chemical composition and electrical properties of the prepared oxide materials. This paper firstly introduces the development of RRAM and its working mechanism; secondly, it reviews the application of solution-processed oxide materials in memory resistors, focusing on the relationship between the composition of the precursor solution, the transformation mechanism and the performance of the prepared oxide insulating layer materials; finally, it describes the key problems of solution-processed insulating layer materials and outlooks the future development direction.