| Abstract: | Hot‐dipped aluminum copper with plating auxiliary KF is introduced in this work. In this study, the intermetallic layer thickness varies with dipping temperature and time in a linear relationship. The main phases are identified to be CuAl2 and K3AlF6 by means of X‐ray diffraction. The reaction equations are deduced according to the elements concentration gradient in cross section. The copper diffusion rate in liquid Al is calculated to be 1.13 × 10−12 m2/s by Fick's second law in semi‐infinite solid model, and the obtained conductivity is 1.758–1.767 × 10−2 Ω mm2/m. The results indicate that the interfacial bonding is in a good state and plating auxiliary KF aqueous solution. can significantly improve the substrate wettability. The appropriate hot‐dipping condition for the samples is 953–973 K for 4–8 s. Copyright © 2009 John Wiley & Sons, Ltd. |
