用镍硅氧化物源横向诱导晶化的多晶硅薄膜

采用磁控溅射法，以镍硅合金为靶，制备了一种适用于金属诱导横向晶化的氧化物镍源——自缓释镍源.该镍源在内部构成和晶化现象上都不同于纯金属镍源.采用该镍源制备低温多晶硅材料，晶化速率不明显依赖于镍源薄膜的厚度，且晶化多晶硅膜内的残余镍量亦可有效降低，可为薄膜晶体管提供宽的工艺窗口.本文对用纯金属镍源所得多晶硅薄膜的晶化率、表面粗糙度、电学特性等与溅射条件的关系进行了研究，并对相应结果进行了讨论. 关键词： 自缓释 金属诱导横向晶化 多晶硅薄膜 低温制备与退火

Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source

With a Nickel-Silicon alloy as a target of magnetron-sputtering under Ar /O₂ mixed gases, a new type of Ni/Si oxide source called self-released nickel source is fabricated. This kind of nickel source is different with the pure nickel source at both crystallized phenomenon and remainder of Ni. Low temperature poly-Silicon crystallized by self-released nickel source has lower nickel-residua and a controllable crystallization rate related without the thickness of Ni source. That is useful for widen process window. The relations of surface roughness and electrical characters of poly-Si crystallized by different source have been studied and discussed.