Abstract: | Atomic and electronic structure modification of a metal-Cd1−xMnxTe interface is achieved using selective etching of the Cd1−xMnxTe surface (x=0, 0.34) and Cd adsorption. It is revealed that Te, TeO2, Mn3O4, and CdTeO3 are formed at the Cd1−xMnxTe surface etched in Br2 solution. Te and Cd1−xMnxTe produce TeCd1−xMnxTe heterojunctions, the salient features of which are nearly symmetric nonlinear I-V characteristics. At the Cd1−xMnxTe surface with adsorbed Cd, CdTe might form, resulting in a CdTe-Cd1−xMnxTe heterojunction. The metal-CdTe-Cd1−xMnxTe microstructure is characterized by a nonlinear dependence of current on voltage and rectifying behaviour. The results obtained give deep insight into electronic processes in metal-Cd1−xMnxTe microstructures. |