Atomic and electronic structure formation at the metal-Cd1−xMnxTe interface

Atomic and electronic structure modification of a metal-Cd_1−xMn_xTe interface is achieved using selective etching of the Cd_1−xMn_xTe surface (x=0, 0.34) and Cd adsorption. It is revealed that Te, TeO₂, Mn₃O₄, and CdTeO₃ are formed at the Cd_1−xMn_xTe surface etched in Br₂ solution. Te and Cd_1−xMn_xTe produce TeCd_1−xMn_xTe heterojunctions, the salient features of which are nearly symmetric nonlinear I-V characteristics. At the Cd_1−xMn_xTe surface with adsorbed Cd, CdTe might form, resulting in a CdTe-Cd_1−xMn_xTe heterojunction. The metal-CdTe-Cd_1−xMn_xTe microstructure is characterized by a nonlinear dependence of current on voltage and rectifying behaviour. The results obtained give deep insight into electronic processes in metal-Cd_1−xMn_xTe microstructures.